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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4369 DESCRIPTION With TO-220F package Complement to type 2SA1658 Good linearity of hFE APPLICATIONS For general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector dissipation Collector-base voltage Collector-emitter voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 30 30 5 3 0.3 UNIT V V V A A W ae ae Emitter-base voltage TC=25ae 15 150 -55~150 Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC4369 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 30 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=20V; IE=0 1.0 |I A IEBO Emitter cut-off current VEB=5V; IC=0 1.0 |I A hFE-1 DC current gain IC=0.5A ; VCE=2V 70 240 hFE-2 DC current gain IC=2.5A ; VCE=2V fT hFE-1 Classifications O 70-140 IN Transition frequency 120-240 ANG CH Y MIC E SE IC=0.5A ; VCE=2V OND TOR UC 25 100 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4369 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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